Overlay
Overlay is a process to align the upper layer with the lower layer. The overlay error is defined as the deviation between these two layers. Overlay error measurement is an imaging process of calculating the deviation on two different overlay marks which mostly are generated by different processes and composed of different materials.
For Overlay measurement, Box-in-Box, Frame-in-Frame, L-Bars, Circle-in-Circle, Cross-in-Cross or customized structures are supported.
Critical Dimension
Optical measurement is a non-contact, non-destructive measurement technique and it is precise and fast. The structure width can be calculated by extracting intensity information from images. The intensity images should be processed to prevent it from interference by noise or deformation.
TZTEK’s metrology system provides the function to eliminate such interference. For structure width which is less than 0.7 μm, UV light can be applied.
Film Thickness
The system is designed to measure thickness of transparent or semitransparent dielectric film(resist) up to three layers. The automatic calibration function is integrated.
High precision and high repeatability
High aspect ratio measurement support
Data processing easier
Measurement of critical dimensions, overlay
Customization available for OC, SMIF and FOUP
Available for wafer size 200/300 mm and the combination
Visible light and UV light are optional
SECS/GEM
Measurement of critical dimensions, overlay
Robot handling
Available for wafer size up to 200mm
SECS/GEM
Low long-term maintenance cost, stable and reliable
Measurement of film thickness and critical dimension
Available for wafer size up to 200mm
Automatically calibration and measurement
SECS/GEM
Low maintenance cost, stable and reliable
